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P2804HVG

NIKO-SEM
Part Number P2804HVG
Manufacturer NIKO-SEM
Description Dual N-Channel MOSFET
Published Jan 20, 2014
Detailed Description NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P2804HVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS 40...
Datasheet PDF File P2804HVG PDF File

P2804HVG
P2804HVG

Overview
NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P2804HVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS 40 RDS(ON) 28m ID 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.
) 1 SYMBOL VDS VGS LIMITS 40 ±20 7 6 40 2 1.
3 -55 to 150 275 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg TL W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL MAXIMUM 62.
5 UNITS °C / W Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 32V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 55 °C 40 1 1.
5 3 ±100 nA 1 10 µA V LIMITS UNIT MIN TYP MAX 1 AUG-19-2004 Free Datasheet http://www.
datasheet4u.
com/ NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P2804HVG SOP-8 Lead-Free On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 ID(ON) RDS(ON) gfs VDS = 5V, VGS = 10V VGS = 4.
5V, ID = 6A VGS = 10V, ID = 7A VDS = 10V, ID = 5A DYNAMIC 20 30 21 24 42 28 A m S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDS = 20V ID ≅ 1A, VGS = 10V, RGEN = 6 VDS = 0.
5V(BR)DSS, VGS = 5V, ID = 7A VGS = 0V, VDS = 10V, f = 1MHz 790 175 65 16 2.
5 2.
1 2.
2 7.
5 4.
4 15 nS nC pF Gate-Source Charge2 Gate-Drain Charge 2 2 Turn-On Delay Time2 Rise Time Turn-Off Delay Time2 Fall Time2 11.
8 21.
3 11 20 SOURCE-DRAIN DIODE RATI...


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