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P2804NVG

NIKO-SEM
Part Number P2804NVG
Manufacturer NIKO-SEM
Description N-&P-Channel MOSFET
Published Jan 20, 2014
Detailed Description NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-...
Datasheet PDF File P2804NVG PDF File

P2804NVG
P2804NVG

Overview
NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 40 -40 RDS(ON) 28m 65m ID 7A -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.
) 1 1 SYMBOL VDS VGS N-Channel P-Channel 40 ±20 7 6 20 2 1.
3 -55 to 150 275 -40 ±20 -6 -5 -20 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg TL W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL MAXIMUM 62.
5 UNITS °C / W Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC VGS = 0V, ID = 250µA Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA N-Ch P-Ch N-Ch P-Ch 40 -40 1.
0 -1.
0 1.
5 -1.
5 2.
5 -2.
5 V MIN TYP MAX UNIT 1 AUG-19-2004 Free Datasheet http://www.
datasheet4u.
com/ NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free VDS = 0V, VGS = ±20V Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V VDS = 32V, VGS = 0V VDS = -32V, VGS = 0V Zero Gate Voltage Drain Current IDSS N-Ch P-Ch N-Ch P-Ch ±100 ±100 1 -1 nA VDS = 30V, VGS = 0V, TJ = 55 °C N-Ch VDS = -30V, VGS = 0V, TJ = 55 °C P-Ch µA 10 -10 On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.
5V, ID = 6A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 30 80 21 50 19 11 42 105 A Drain-Source On-State Resistance1 VGS = -4.
5V, ID = -4A RDS(ON) VGS = 10V, ID = 7A VGS = -10V, ID = -5A m 28 65 Forward Transconductance1 gfs VDS = 10V, ID = 7A VDS = -10V, ID = -5A S DYNAMIC Input...


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