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RT3K11M

Part Number	RT3K11M
Manufacturer	Isahaya Electronics
Description	Composite Transistor
Published	Jan 20, 2014
Detailed Description	RT3K11M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K11M is a composite trans...
Datasheet	RT3K11M PDF File

Overview

RT3K11M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K11M is a composite transistor built with two INK0001AX chips in SC-88 package.
OUTLINE DRAWING 2.
1 1.
25 ① 0.
65 ② ③ ⑥ ⑤ ④ 0.
2 Unit：mm FEATURE ・Input impedance is high, and not necessary to consider a drive electric current.
・Vth is low, and drive by low voltage is possible.
Vth=0.
6～1.
2V ・Low on Resistance.
Ron=3.
5Ω(TYP) ・High speed switching.
・Small package for easy mounting.
2.
0 APPLICATION high speed switching , Analog switching 0.
65 0.
13 0～0.
1 ⑤ Tr.
1 0.
9 0.
65 ⑥ ④ Tr.
2 TERMINAL CONNECTOR ①：SOURCE1 ②：GATE1 ③：DRAIN2 ④：SOURCE2 ⑤：GATE2 ⑥:DRAIN1 JEITA：SC-88 ① ② ③ MAXIMUM RATING (Ta=25℃) SYMBOL VDSS VGSS ID PD Tch Tstg PARAMETER RATING 50 UNIT V V mA mW ℃ ℃ 6 5 4 MARKING Drain-source voltage Gate-source voltage Drain current Total power dissipation（Ta=25℃） Channel temperature Range of Storage temperature ±8 100 150 ＋125 -55～＋125 .
１ .
Ｋ１１ 2 3 ISAHAYA ELECTRONICS CORPORATION Fre...

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RT3K11M Composite Transistor - Isahaya Electronics

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