DatasheetsPDF.com

RT3K66M

Isahaya Electronics
Part Number RT3K66M
Manufacturer Isahaya Electronics
Description Composite Transistor
Published Jan 20, 2014
Detailed Description RT3K66M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K66M is a composite trans...
Datasheet PDF File RT3K66M PDF File

RT3K66M
RT3K66M

Overview
RT3K66M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K66M is a composite transistor built with two INK0012AX chips in SC-88 package.
OUTLINE DRAWING 2.
1 1.
25 Unit：mm FEATURE ・Input impedance is high, and not necessary to consider a drive electric current.
0.
425 ① 2.
1 1.
3 0.
65 0.
65 ② ③ 0.
425 ⑥ ⑤ ④ 0.
23 0.
13 ・Drive voltage 4V ・Low on Resistance.
RDS(ON)=1.
7Ω(TYP) @ID=100mA, VGS=4.
0V RDS(ON)=1.
0Ω(TYP) @ID=100mA, VGS=10V ・High speed switching.
・Small package for easy mounting.
0.
9 High speed switching , Analog switching 0.
7 APPLICATION 0～0.
1 ⑥ Tr.
1 ⑤ ④ TERMINAL CONNECTOR ①：SOURCE1 ②：GATE1 ③：DRAIN2 ④：SOURCE2 ⑤：GATE2 ⑥:DRAIN1 JEITA：SC-88 Tr.
2 ① ② ③ MAXIMUM RATING (Ta=25℃) (Tr1,Tr2 Common) SYMBOL VDSS VGSS ID IDP PD Tch Tstg PARAMETER Drain-source voltage Gate-source voltage Drain current(DC) Drain current(Pulse) Total power dissipation Channel temperature Range of Storage temperature RATING 30 ±20 200 400(※1) 150 ＋150 -55～＋150 UNIT V V mA mA mW ℃ ℃ MARKING ⑥ ⑤ ④ .
Ｋ６ C９６ Ｙ９９ C９７ ９ ① ② ③ ※1：Pw≦10µs, Duty cycle≦1% ISAHAYA ELECTRONICS CORPORATION Free Datasheet http://www.
datasheet4u.
com/ RT3K66M Composite Transistor For high speed switching Silicon N-channel MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃) (Tr1,Tr2 Common) Symbol V(BR)DSS IGSS IDSS Vth | Yfs | RDS(ON) Ciss Coss ton toff Parameter Drain-source breakdown voltage Gate-source leak current Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Static drain-source on-state resistance Input capacitance Output capacitance Switching time Test conditions ID=100µA，VGS=0V VGS=±15V，VDS=0V VDS=30V，VGS=0V ID=250µA，VDS=VGS VDS=10V，ID=100mA ID=100mA，VGS=4.
0V ID=100mA，VGS=10.
0V VDS=10V，VGS=0V，f=1MHz VDD=5V，ID=10mA VGS=0～5V Limits Min 30 1.
0 Typ 245 1.
7 1.
0 23 7.
0 30 66 Max ±1.
0 1.
0 2.
0 Unit V µA µA V mS Ω pF ns Switching time test condition Test circuit 5V IN RL 0 10μs VDD=5V Duty≦1% Common source Ta=25℃ 50Ω VDD OUT 5V 90% Input Wavef...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)