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2SK4106

Toshiba
Part Number 2SK4106
Manufacturer Toshiba
Description N-Channel MOSFET
Published Jan 20, 2014
Detailed Description 2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4106 Switching Regulator Applications U...
Datasheet PDF File 2SK4106 PDF File

2SK4106
2SK4106

Overview
2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4106 Switching Regulator Applications Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 0.
4 Ω (typ.
) High forward transfer admittance: |Yfs| = 8.
5 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 12 48 45 364 12 4 150 -55 to 150 A W mJ A mJ °C °C Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA — SC-67 2-10R1B Weight: 1.
9 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.
78 62.
5 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 4.
3 mH, IAR = 12 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device.
Please handle with caution.
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