DatasheetsPDF.com

2SD882H

Part Number	2SD882H
Manufacturer	SEMTECH
Description	NPN Silicon Power Transistor
Published	Jan 22, 2014
Detailed Description	ST 2SD882H NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its D...
Datasheet	2SD882H PDF File

Overview

ST 2SD882H NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain.
E C B TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 C) Parameter O Symbol VCBO VCEO VEBO IC ICP Ptot Ptot Tj TS Value 60 30 5 3 7 1 10 150 - 55 to + 150 Unit V V V A A W W O Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (pulse) Total Power Dissipation(Ta = 25 OC) Total Power Dissipation(TC = 25 OC) Junction Temperature Storage Temperature Range C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 1 A Current Gain Group Symbol hFE hFE hFE hFE hFE ICBO IEBO VCEsat VBEsat fT Cob Min.
60 100 160 200 30 - Typ.
90 45 Max.
120 200 320 400 1 1 0.
5 2 - Unit µA µA V V MHz pF at VCE = 2 V, IC = 20 mA Collector Cutoff Current at VCB = 60 V Emitter Cutoff Current at VEB = 3 V Collector Emitter Saturation Voltage at IC = 2 A, IB = 0.
2 A Base Emitter Saturation Voltage at IC = 2 A, IB = 0.
2 A Gain Bandwidth Product at VCE = 5 V, IC = 0.
1 A Output Capacitance at VCB = 10 V, f = 1 MHz R Q P E SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/09/2006 Free Datasheet http://www.
datasheet4u.
com/ ST 2SD882H TYPICAL CHARACTERISTICS (Ta=25 C) TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE NOTE 1.
Aluminum heat sink of 1.
0 mm thickness.
2.
With no insulator film.
3.
With silicon compound.
o DERATING CURVES FOR ALL TYPES THERMAL RESISTANCE vs.
PULSE WIDTH VCE=10V I C=1.
0A 30 Duty=0.
001 10 P T-Total Power Dissipation-W 100 dT-Percentage of Rated Current-% 8 6 100 cm 2 80 Di ss ite d Rth-Thermal Resistance- oC/W S/b Lim 10 3 fin In ite at he nk si ip 60 40 at io n Li m d ite 4 1 0.
3 25c m 2 9cm 2 2 Without 20 heat sin k 0 0 50 100 150 Ta-Ambient Temperature -o C 0.
1 0 50 100 150 0.
3 1 3 10 30 ...

Similar Datasheet

2SD880 NPN Epitaxial Silicon Transistor - GME
2SD880 NPN Transistor - UTC
2SD880 NPN Transistor - INCHANGE
2SD880 SILICON POWER TRANSISTOR - SavantIC
2SD880 NPN Silicon Epitaxial Power Transistor - Weitron
2SD880 Transistor - TGS
2SD880-GR NPN Silicon Power Transistors - MCC
2SD880-Q NPN Silicon Power Transistors - MCC
2SD880-Y NPN Silicon Power Transistors - MCC
2SD880G NPN Transistor - UTC

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)