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TSF20H120C

Taiwan Semiconductor
Part Number TSF20H120C
Manufacturer Taiwan Semiconductor
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published Jan 22, 2014
Detailed Description creat by ART TSF20H120C Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Pate...
Datasheet PDF File TSF20H120C PDF File

TSF20H120C
TSF20H120C

Overview
creat by ART TSF20H120C Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per JESD 22-B102 Polarity: As marked Mounting torque: 5 in-lbs.
max.
Weight: 1.
7 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTIC...


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