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SSF7509

Silikron
Part Number SSF7509
Manufacturer Silikron
Description MOSFET
Published Jan 22, 2014
Detailed Description SSF7509 Main Product Characteristics: VDSS RDS(on) ID 75V 6.5mohm(typ.) 80A TO220 Marking and pin Assignment Schematic d...
Datasheet PDF File SSF7509 PDF File

SSF7509
SSF7509

Overview
SSF7509 Main Product Characteristics: VDSS RDS(on) ID 75V 6.
5mohm(typ.
) 80A TO220 Marking and pin Assignment Schematic diagram Features and Benefits:      Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating: Symbol ID @ TC = 25° C ID @ TC = 100° C IDM PD @TC = 25° C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.
3mH Avalanche Current @ L=0.
3mH Operating Junction and Storage Temperature Range Max.
80 70 320 200 2.
0 75 ± 20 375 50 -55 to + 175 W W/° C V V mJ A ° C A Units ©Silikron Semiconductor CO.
,LTD.
2012.
04.
09 www.
silikron.
com Version : 3.
5 page 1 of 8 Free Datasheet http://www.
datasheet4u.
com/ SSF7509 Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ.
— — — Max.
0.
75 62 40 Units ℃/W ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Min.
75 — — 2 — — — — -100 — — — — — — — — — — Typ.
— 6.
5 12.
5 — 2.
35 — — — — Max.
— 8 13 4 — 1 50 100 — — — — — — — — — — — pF VGS=10V, VDS=30V, ns RL=15Ω, RGEN=2.
5Ω VGS = 0V VDS = 25V ƒ = 1MHz nC Units V mΩ Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 30A TJ = 125℃ VDS = VGS, ID = 250μA ...


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