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D1450

Panasonic Semiconductor
Part Number D1450
Manufacturer Panasonic Semiconductor
Description 2SD1450
Published Jan 23, 2014
Detailed Description Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 ...
Datasheet PDF File D1450 PDF File

D1450
D1450

Overview
Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 4.
0±0.
2 3.
0±0.
2 0.
7±0.
1 s Features q q q Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (Ta=25˚C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 25 20 12 1 0.
5 300 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.
27 1.
27 2.
54±0.
15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*3 Conditions VCB = 25V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.
5A*2 VCE = 2V, IC = 1A*2 IC = 500mA, IB = 20mA*2 IC = 500mA, IB = 20mA*2 200 10 0.
6 *2 min typ max 100 2.
0±0.
2 (Ta=25˚C) marking +0.
2 0.
45–0.
1 s Absolute Maximum Ratings 15.
6±0.
5 Optimum for high-density mounting.
Allowing supply with the radial taping.
Low collector to emitter saturation voltage VCE(sat).
Unit nA V V V 25 20 12 200 60 0.
13 0.
4 1.
2 800 V V MHz pF Ω VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz Pulse measurement *1h FE1 Rank classification R 200 ~ 350 S 300 ~ 500 T 400 ~ 800 *3R on Measurement circuit 1kΩ Rank hFE1 IB=1mA f=1kHz V=0.
3V VB VV VA Ron= VB !1000(Ω) VA–VB 1 Free Datasheet http://www.
datasheet4u.
com/ Transistor PC — Ta 500 2.
4 Ta=25˚C 2.
0 2SD1450 IC — VCE 100 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 Collector power dissipation PC (mW) 30 10 3 1 0.
3 0.
1 0.
03 0.
01 0.
01 0.
03 Ta=–25˚C 75˚C Collector current IC (A) 400 1.
6 IB=4.
0mA 3.
5mA 1.
2 3.
...


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