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IXTT16N10D2

IXYS
Part Number IXTT16N10D2
Manufacturer IXYS
Description Depletion Mode MOSFET
Published Jan 23, 2014
Detailed Description Advance Technical Information Depletion Mode MOSFET IXTH16N10D2 IXTT16N10D2 VDSX ID(on) RDS(on) = > ≤ 100V 16A 64mΩ...
Datasheet PDF File IXTT16N10D2 PDF File

IXTT16N10D2
IXTT16N10D2


Overview
Advance Technical Information Depletion Mode MOSFET IXTH16N10D2 IXTT16N10D2 VDSX ID(on) RDS(on) = > ≤ 100V 16A 64mΩ N-Channel TO-247 (IXTH) Symbol VDSX VDGX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Maximum Ratings 100 100 ±20 ±30 695 - 55 .
.
.
+150 150 - 55 .
.
.
+150 V V V V W °C °C °C °C °C Nm/lb.
in.
g g G D S D (Tab) TO-268 (IXTT) G S D (Tab) 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268 300 260 1.
13 / 10 6 4 G = Gate S = Source D = Drain Tab = Drain Features • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSX VGS(off) IGSX IDSX(off) RDS(on) ID(on) VGS = - 5V, ID = 250μA VDS = 25V, ID = 1mA VGS = ±20V, VDS = 0V VDS = VDSX, VGS= - 5V VGS = 0V, ID = 8A, Note 1 VGS = 0V, VDS = 25V, Note 1 16 TJ = 125°C Characteristic Values Min.
Typ.
Max.
100 - 2.
0 - 4.
0 V V Advantages • Easy to Mount • Space Savings • High Power Density Applications • • • • • • Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads ±100 nA 5 μA 75 μA 64 mΩ A © 2010 IXYS CORPORATION, All Rights Reserved DS100258(4/10) Free Datasheet http://www.
datasheet4u.
com/ IXTH16N10D2 IXTT16N10D2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS Safe-Operating-Area Specification Symbol SOA Test Conditions VDS = 100V, ID = 4.
2A, TC = 75°C, tp = 5s Characteristic Values Min.
Typ.
Max.
420 W VGS = + 5V, VDS = 50V, ID = 8A Resistive Switching Times VGS = + 5V, VDS = 50V, ID = 8A RG = 3.
3Ω (External) VGS = -10V, VDS = 25V, f = 1MHz VDS = 20V, ID = 8A, Note 1 Characteristic Values Min.
Typ.
Max.
7 11 5700 1980 940 45 43 340 70 225 22 126 0.
21 S pF pF pF ns ns ns ns nC nC nC 0.
18 °C/W °C/W e 1 2 3 ...



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