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ME75N75T-G

Matsuki
Part Number ME75N75T-G
Manufacturer Matsuki
Description N-Channel MOSFET
Published Jan 28, 2014
Detailed Description ME75N75T / ME75N75T-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION The ME75N75T is the N-Channel logic enhancement m...
Datasheet PDF File ME75N75T-G PDF File

ME75N75T-G
ME75N75T-G

Overview
ME75N75T / ME75N75T-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION The ME75N75T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
FEATURES ● RDS(ON)≦10mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS PIN CONFIGURATION (TO-220) Top View ● Power Management ● DC/DC Converter ● Load Switch e Ordering Information: ME75N75T (Pb-free) ME75N75T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ TC=25℃ TC=70℃ Symbol VDSS VGSS ID IDM PD TJ, Tstg RθJC Limit 75 ±25 93 78 372 200 140 -55 to 175 0.
75 Unit V V A A W ℃ ℃/W Operating Junction and Storage Temperat...


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