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C2929

INCHANGE
Part Number C2929
Manufacturer INCHANGE
Description Silicon NPN Power Transistor
Published Feb 7, 2014
Detailed Description INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2929 DESCRIPTION ·High Collecto...
Datasheet PDF File C2929 PDF File

C2929
C2929

Overview
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2929 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 450 400 400 7 3 1 40 150 -45~150 UNIT V V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.
0 UNIT ℃/W isc Website：www.
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