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4957AGM

Part Number	4957AGM
Manufacturer	Advanced Power Electronics
Description	AP4957AGM
Published	Feb 10, 2014
Detailed Description	AP4957AGM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Simple Drive Requirement D1 D2 ...
Datasheet	4957AGM PDF File

Overview

AP4957AGM RoHS-compliant Product Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Simple Drive Requirement D1 D2 D1 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G2 S2 -30V 26mΩ -7.
4A ▼ Dual P MOSFET Package SO-8 S1 G1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 ±20 -7.
4 -5.
9 -30 2 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Continuous Drain Current Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.
5 Unit ℃/W Data and specifications subject to change without notice 1 200712191 Free Datasheet http://www.
datasheet4u.
net/ AP4957AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-7A VGS=-4.
5V, ID=-5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70oC) Min.
-30 -1 - Typ.
7 16 2.
8 9.
3 9 6.
5 40 26 190 185 5.
3 Max.
Units 26 36 -3 -1 -25 ±100 26 8 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω VDS=VGS, ID=-250uA VDS=-10V, ID=-7A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=±20V ID=-7A VDS=-24V VGS=-4.
5V VDS=-15V ID=-1A RG=3.
3Ω,VGS=-10V RD=15Ω VGS=0V VDS=-25V f=1.
0MHz f=1.
0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse ...

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4957AGM AP4957AGM - Advanced Power Electronics

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