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P70N06-14

Vishay
Part Number P70N06-14
Manufacturer Vishay
Description N-Channel MOSFET
Published Feb 10, 2014
Detailed Description SUP/SUB70N06-14 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.014 ...
Datasheet PDF File P70N06-14 PDF File

P70N06-14
P70N06-14


Overview
SUP/SUB70N06-14 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.
014 ID (A) 70a TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View SUP70N06-14 SUB70N06-14 D S G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation L = 0.
1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 100_C Symbol VGS ID IDM IAR EAR PD TJ, Tstg Limit "20 70a 49 Unit V A 160 70 180 142c W 3.
7 –55 to 175 _C mJ Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes: a.
Package limited.
b.
Duty cycle v 1%.
c.
See SOA curve for voltage derating.
d.
When mounted on 1” square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.
vishay.
com/www/product/spice.
htm Document Number: 70291 S-57253—Rev.
C, 24-Feb-98 www.
vishay.
com S FaxBack 408-970-5600 RthJC RthJA 62.
5 1.
05 Symbol Limit 40 Unit _C/W 2-1 Free Datasheet http://www.
datasheet4u.
net/ SUP/SUB70N06-14 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 1 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A a D i S Drain-Source On-State O S Resistance R i Symbol Test Condition Min Typ Max Unit 60 V 2.
0 3.
0 4.
0 "100 1 50 150 70 0.
014 0.
023 0.
028 25 50 S W A mA nA rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VD...



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