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HGT1S12N60C3DS

Fairchild Semiconductor
Part Number HGT1S12N60C3DS
Manufacturer Fairchild Semiconductor
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast...
Datasheet PDF File HGT1S12N60C3DS PDF File

HGT1S12N60C3DS
HGT1S12N60C3DS

Overview
HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49123.
The diode used in anti-parallel with the IGBT is the development type TA49188.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
Formerly Developmental Type TA49182.
Features • 24A, 600V at TC = 25oC • Typical Fall Time at TJ = 150oC .
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210ns • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB E C G COLLECTOR (FLANGE) Ordering Informat...


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