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HGT1S1N120BNDS

Intersil Corporation
Part Number HGT1S1N120BNDS
Manufacturer Intersil Corporation
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 File Number 4650.2 5.3A, 1200V, NPT Series N-Channel IGBT with Ant...
Datasheet PDF File HGT1S1N120BNDS PDF File

HGT1S1N120BNDS
HGT1S1N120BNDS

Overview
HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 File Number 4650.
2 5.
3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs.
They are new members of the MOS gated high voltage switching IGBT family.
IGBTs combine the best features of MOSFETs and bipolar transistors.
This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is development type number TA49316.
The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056).
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies...


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