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HGTD3N60C3S

Fairchild Semiconductor
Part Number HGTD3N60C3S
Manufacturer Fairchild Semiconductor
Description 6A/ 600V/ UFS Series N-Channel IGBTs
Published Mar 23, 2005
Detailed Description S E M I C O N D U C T O R HGTD3N60C3, HGTD3N60C3S 6A, 600V, UFS Series N-Channel IGBTs Description The HGTD3N60C3 and H...
Datasheet PDF File HGTD3N60C3S PDF File

HGTD3N60C3S
HGTD3N60C3S

Overview
S E M I C O N D U C T O R HGTD3N60C3, HGTD3N60C3S 6A, 600V, UFS Series N-Channel IGBTs Description The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly developme...


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