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HGTD6N50E1

Intersil Corporation
Part Number HGTD6N50E1
Manufacturer Intersil Corporation
Description 6A/ 400V and 500V N-Channel IGBTs
Published Mar 23, 2005
Detailed Description HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S March 1997 6A, 400V and 500V N-Channel IGBTs Packages HGTD6N40E1, HGTD...
Datasheet PDF File HGTD6N50E1 PDF File

HGTD6N50E1
HGTD6N50E1

Overview
HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S March 1997 6A, 400V and 500V N-Channel IGBTs Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • 6A, 400V and 500V • VCE(ON): 2.
5V Max.
• TFALL: 1.
0µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance Applications • Power Supplies • Motor Drives • Protective Circuits HGTD6N40E1S, HGTD6N50E1S JEDEC TO-252AA COLLECTOR (FLANGE) GATE EMITTER Description The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers.
These types can be operated directly from low power integrated circuits.
PACKAGING AVAILABILITY PART NUMBER HGTD6N40E1 HGTD6N50E1 HGTD6N40E1S HGTD6N50E1S PACKAGE TO-251AA TO-251AA TO-252AA TO-252AA BRAND G6N40E G6N50E G6N40E G6N50E E G Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOT...


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