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HGTG12N60C3D

Intersil Corporation
Part Number HGTG12N60C3D
Manufacturer Intersil Corporation
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTG12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfa...
Datasheet PDF File HGTG12N60C3D PDF File

HGTG12N60C3D
HGTG12N60C3D

Overview
HGTG12N60C3D Data Sheet January 2000 File Number 4043.
2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49123.
The diode used in anti parallel with the IGBT is the development type TA49061.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction los...


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