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HGTG15N120C3D

Intersil Corporation
Part Number HGTG15N120C3D
Manufacturer Intersil Corporation
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTG15N120C3D May 1997 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Description The HGTG15N...
Datasheet PDF File HGTG15N120C3D PDF File

HGTG15N120C3D
HGTG15N120C3D

Overview
HGTG15N120C3D May 1997 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Description The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
The diode used in anti-Pa...


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