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HGTG24N60D1

Intersil Corporation
Part Number HGTG24N60D1
Manufacturer Intersil Corporation
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTG24N60D1 May 1995 24A, 600V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE ...
Datasheet PDF File HGTG24N60D1 PDF File

HGTG24N60D1
HGTG24N60D1

Overview
HGTG24N60D1 May 1995 24A, 600V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) Features • 24A, 600V • Latch Free Operation • Typical Fall Time <500ns • High Input Impedance • Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses ar...


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