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HTN2A60

HUASHAN ELECTRONIC
Part Number HTN2A60
Manufacturer HUASHAN ELECTRONIC
Description NON INSULATED TYPE TRIAC
Published Feb 13, 2014
Detailed Description Shantou Huashan Electronic Devices Co.,Ltd. HTN2A60 NON INSULATED TYPE TRIAC (TO-126 PACKAGE) ¨€ Features * Repetitive...
Datasheet PDF File HTN2A60 PDF File

HTN2A60
HTN2A60


Overview
Shantou Huashan Electronic Devices Co.
,Ltd.
HTN2A60 NON INSULATED TYPE TRIAC (TO-126 PACKAGE) ¨€ Features * Repetitive Peak Off-State Voltage: 600V * R.
M.
S On-state Current(IT(RMS)=2A) * High Commutation dv/dt ¨€ General Description The Triac HTN2A60 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay.
¨€ Absolute Maximum Ratings£¨ Ta=25¡æ£© Tstg¡ª Tj ¡ª PGM¡ª VDRM¡ª IT£¨ RMS£©¡ª VGM¡ª¡ª IGM¡ª¡ª Storage Temperature¡-¡ ¡¡¡¡¡¡¡¡¡Operating Junction Temperature ¡Peak Gate Power Dissipation¡- ¡Repetitive Peak Off-State Voltage¡-¡ R.
M.
S On-state Current£¨ Peak Gate Voltage¡ - ¡ Peak Gate Current¡-¡Ta=66¡æ£© ¡¡¡-¡-¡-¡-¡¡-¡-¡-¡-¡¡-¡-¡-¡-¡¡- -40~125¡æ -40~125¡æ 1.
0W 600V 1.
5A 6.
0V 0.
5A 13/15A ¡- ¡-¡-¡-¡-¡¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡- I TSM ¡ ª ¡ ª Surge On-state Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)¡ - ¡ - ¡ - ¨€ Electrical Characteristics£¨ Ta=25¡æ£© Symbol IDRM Items Repetitive Peak Off-State Current Peak On-State Voltage Gate Trigger Current£¨¢ñ£© Gate Trigger Current£¨¢ò£© Gate Trigger Current£¨¢ó£© Gate Trigger Voltage£¨¢ñ£© Gate Trigger Voltage£¨¢ò£© Gate Trigger Voltage£¨¢ó£© Non-trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation Holding Current Thermal Resistance 0.
2 5.
0 Min.
Typ.
Max.
0.
5 Unit mA Conditions VD=VDRM,Single Phase, VTM I+GT1 I- GT1 I- GT3 V+ GT1 V- GT1 V- GT3 VGD (dv/dt)c 1.
6 20 20 20 1.
5 1.
5 1.
5 V mA mA mA V V V V V/µS Half Wave, TJ=125¡æ IT=2.
1A, Inst.
Measurement VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm VD=6V, RL=10 ohm TJ=125¡æ TJ=125¡æ ,VD=1/2VDRM ,VD=2/3VDRM (di/dt)c= -0.
75A/ms 5.
0 6.
25 ¡æ mA /W Junction to case IH Rth(j-c) Free Datasheet http://www.
datasheet4u.
net/ Shantou Huashan Electronic Devices Co.
,Ltd.
HTN2A60 Fig 2.
On-State Voltage ¨€ PERFORMANCE CURVES Fig 1.
Gate Characteristics Gate Current On-state Current [A] Gate ...



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