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HGTH20N40C1

Intersil Corporation
Part Number HGTH20N40C1
Manufacturer Intersil Corporation
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 April 1995 15A, 20A, 400V and 500V N-Channel IGBTs Package...
Datasheet PDF File HGTH20N40C1 PDF File

HGTH20N40C1
HGTH20N40C1

Overview
HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 April 1995 15A, 20A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EMITTER COLLECTOR COLLECTOR (FLANGE) GATE Features • 15A and 20A, 400V and 500V • VCE(ON) 2.
5V • TFI 1µs, 0.
5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • No Anti-Parallel Diode Applications • Power Supplies • Motor Drives • Protection Circuits HGTP-TYPES JEDEC TO-220AB COLLECTOR (FLANGE) EMITTER COLLECTOR GATE Description The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers.
These types can be operated directly from low-power integrated circuits.
PACKAGING AVAILABILITY PART NUMBER HGTH20N40C1 HGTH20N40E1 HGTH20N50C1 HGTH20N50E1 HGTP15N40C1 HGTP15N40E1 HGTP15N50C1 HGTP15N50E1 PACKAGE TO-218AC TO-218AC TO-218AC TO-218AC TO-220AB TO-220AB TO-220AB TO-220AB BRAND G20N40C1 G20N40E1 G20N50C1 G20N50E1 G15N40C1 G15N40E1 G15N50C1 G15N50E1 E G Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number.
TC = +25oC, Unless Otherwise Specified HGTH20N40C1 HGTH20N50C1 HGTH20N40E1 HGTH20N50E1 Collector-Emitter Voltage.
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VCES 400 500 Collector-Gate Voltage RGE = 1MΩ .
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VCGR 400 500 Reverse Collector-Emitter Voltage .
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VCES(rev.
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VGE ±20 ±20 Collector Current Continuous .
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IC 20 20 Collector Current Pulsed .
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ICM 35 35 Power Dissipation at TC = +25oC .
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PD 100 100 Power Dissipation Derating TC > +25oC .
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