DatasheetsPDF.com

STF6NK60Z

STMicroelectronics
Part Number STF6NK60Z
Manufacturer STMicroelectronics
Description N-CHANNEL Power MOSFET
Published Feb 16, 2014
Detailed Description STP6NK50Z - STF6NK60Z STD6NK50Z N-CHANNEL 500V - 0.98Ω - 5.6A TO-220 / TO-220FP / DPAK Zener-Protected SuperMESH™Power M...
Datasheet PDF File STF6NK60Z PDF File

STF6NK60Z
STF6NK60Z

Overview
STP6NK50Z - STF6NK60Z STD6NK50Z N-CHANNEL 500V - 0.
98Ω - 5.
6A TO-220 / TO-220FP / DPAK Zener-Protected SuperMESH™Power MOSFET TARGET DATA TYPE STP6NK50Z STF6NK50Z STD6NK50Z s s s s s s VDSS 500 V 500 V 500 V RDS(on) < 1.
2 Ω < 1.
2 Ω < 1.
2 Ω ID 5.
6 A 5.
6 A 5.
6 A Pw 90 W 25 W 90 W 3 1 2 TYPICAL RDS(on) = 0.
98 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 1 DPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING s ORDERING INFORMATION SALES TYPE STP6NK50Z STF6NK50Z STD6NK50ZT4 MARKING P6NK50Z F6NK50Z D6NK50 PACKAGE TO-220 TO-220FP DPAK PACKAGING TUBE TUBE TAPE & REEL October 2003 1/9 Free Datasheet http://www.
datasheet4u.
net/ STP6NK50Z - STF6NK50Z - STD6NK50Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP6NK50Z STD6NK50Z Value STF6NK50Z Unit VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.
5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 5.
6 3.
5 22.
4 90 0.
72 500 500 ± 30 5.
6 (*) 3.
5 (*) 22.
4 (*) 25 0.
2 3000 4.
5 2500 -55 to 150 -55 to 150 V V V A A A W W/°C V V/ns V °C °C ( ) Pulse width limited by safe op...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)