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HGTP10N40E1D

Part Number	HGTP10N40E1D
Manufacturer	Intersil Corporation
Description	N-Channel IGBT
Published	Mar 23, 2005
Detailed Description	HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D April 1995 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel...
Datasheet	HGTP10N40E1D PDF File

Overview

HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D April 1995 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • 10A, 400V and 500V • VCE(ON): 2.
5V Max.
• TFALL: 1µs, 0.
5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • Anti-Parallel Diode Applications • Power Supplies • Motor Drives • Protective Circuits Terminal Diagram N-CHANNEL ENHANCEMENT MODE C Description The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers.
They feature a discrete anti-parallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region.
These types can be operated directly from low power integrated circuits.
PACKAGING AVAILABILITY PART NUMBER HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB BRAND 10N40C1D 10N40E1D 10N50C1D 10N50E1D G E NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Speciﬁed HGTP10N40C1D HGTP10N40E1D 400 400 ±20 17.
5 10 75 0.
6 -55 to +150 HGTP10N50C1D HGTP10N50E1D 500 500 ±20 17.
5 10 75 0.
6 -55 to +150 UNITS V V V A W W/oC oC Collector-Emitter Voltage .
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VCES Collector-Gate Voltage RGE = 1MΩ .
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VCGR Gate-Emitter Voltage .
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VGE Collector Current Continuous at TC = +25oC .
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IC25 at TC = +90oC .
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IC90 Power Dissipation Total at TC = +25oC .
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