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HGTP3N60A4D

Fairchild Semiconductor
Part Number HGTP3N60A4D
Manufacturer Fairchild Semiconductor
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGT1S3N60A4DS, HGTP3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode...
Datasheet PDF File HGTP3N60A4D PDF File

HGTP3N60A4D
HGTP3N60A4D

Overview
HGT1S3N60A4DS, HGTP3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49327.
The diode used in anti-parallel is the development type TA49369.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction los...


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