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HGTP3N60C3D

Fairchild Semiconductor
Part Number HGTP3N60C3D
Manufacturer Fairchild Semiconductor
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description S E M I C O N D U C T O R HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parall...
Datasheet PDF File HGTP3N60C3D PDF File

HGTP3N60C3D
HGTP3N60C3D

Overview
S E M I C O N D U C T O R HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) January 1997 Features • 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time .
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130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a...


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