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TTA1943

Toshiba
Part Number TTA1943
Manufacturer Toshiba
Description Silicon PNP Transistor
Published Feb 20, 2014
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type TTA1943 Power Amplifier Applications • High collector voltage: VCEO = -230...
Datasheet PDF File TTA1943 PDF File

TTA1943
TTA1943

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type TTA1943 Power Amplifier Applications • High collector voltage: VCEO = -230 V (min) • Complementary to TTC5200 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.
TTA1943 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc=25°C) Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg -230 V -230 V -5 V -15 A -1.
5 A 150 W 150 °C −55 to 150 °C 1.
BASE 2.
COLLECTOR(HEAT SINK) 3.
EMITTER JEDEC ― JEITA ― TOSHIBA 2-21F1A Weight : 9.
75 g (typ) Note1 : Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 2009-03 1 2013-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off curren Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob VCB = -230 V, IE = 0 VEB = -5 V, IC = 0 IC = -50 mA, IB = 0 VCE = -5 V, IC = -1 A VCE = -5 V, IC = -7 A IC = -8 A, IB = -0.
8 A VCE = -5 V, IC = -7 A VCE = -5 V, IC = -1 A VCB = -10 V, IE = 0, f = 1 MHz TTA1943 Min Typ.
Max Unit ― ― -5.
0 μA ― ― -5.
0 μA -230 ― ...


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