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P45N02LDG

Niko-Sem
Part Number P45N02LDG
Manufacturer Niko-Sem
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published Feb 21, 2014
Detailed Description NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P45N02LDG TO-252 (DPAK) Lead-Free D PRODUCT S...
Datasheet PDF File P45N02LDG PDF File

P45N02LDG
P45N02LDG

Overview
NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P45N02LDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 20m£[ ID 45A 1.
GATE 2.
DRAIN 3.
SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 SYMBOL VGS LIMITS ±20 45 28 140 20 140 5.
6 55 33 -55 to 150 275 UNITS V TC = 25 °C TC = 100 °C ID IDM IAR A L = 0.
1mH L = 0.
05mH TC = 25 °C TC = 100 °C EAS EAR PD Tj, Tstg TL mJ W Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.
) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1 2 1 °C SYMBOL RθJC RθJA RθCS TYPICAL MAXIMUM 3 70 UNITS °C / W 0.
7 Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1¢H ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 LIMITS UNIT MIN TYP MAX V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V 25 0.
8 1.
2 2.
5 ±250 25 250 45 V nA µA A 1 Sep-02-2004 Free Datasheet http://www.
datasheet-pdf.
com/ NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor VGS = 7V, ID = 18A VGS = 10V, ID = 20A VDS = 15V, ID = 30A P45N02LDG TO-252 (DPAK) Lead-Free 20 15 16 30 28 Drain-Source On-State 1 Resistance Forward Transconductance DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 2 1 RDS(ON) gfs m£[ S Ciss Coss Crss Qg Qgs Qgd 2 600 VGS = 0V, VDS = 15V, f = 1MHz 290 100 25 VDS = 0.
5V(BR)DSS, VGS = 10V, ID = 20A 2.
9 7.
0 7.
0 VDS = 15V, R...


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