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SVD7N65AF

SILAN
Part Number SVD7N65AF
Manufacturer SILAN
Description 650V N-CHANNEL MOSFET
Published Feb 21, 2014
Detailed Description SVD7N65AT/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD7N65AT/F is an N-channel enhancement mode power M...
Datasheet PDF File SVD7N65AF PDF File

SVD7N65AF
SVD7N65AF


Overview
SVD7N65AT/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD7N65AT/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES ∗ 7A,650V,RDS(on)(typ)=1.
1 Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No.
SVD7N65AT SVD7N65AF Package TO-220-3L TO-220F-3L Marking SVD7N65AT SVD7N65AF Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.
,LTD Http://www.
silan.
com.
cn REV:1.
1 2010.
11.
10 Page 1 of 7 Free Datasheet http://www.
datasheet-pdf.
com/ SVD7N65AT/F_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg 160 1.
28 609 -55～+150 -55～+150 Rating SVD7N65AT 650 ±30 7.
0 28 52 0.
42 SVD7N65AF Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating SVD7N65AT 0.
78 62.
5 SVD7N65AF 2.
4 120 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Parameter Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-...


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