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APT65GP60L2DQ2G

Advanced Power Technology
Part Number APT65GP60L2DQ2G
Manufacturer Advanced Power Technology
Description IGBT
Published Feb 26, 2014
Detailed Description TYPICAL PERFORMANCE CURVES ® APT65GP60L2DQ2 APT65GP60L2DQ2G* APT65GP60L2DQ2 600V *G Denotes RoHS Compliant, Pb Free T...
Datasheet PDF File APT65GP60L2DQ2G PDF File

APT65GP60L2DQ2G
APT65GP60L2DQ2G

Overview
TYPICAL PERFORMANCE CURVES ® APT65GP60L2DQ2 APT65GP60L2DQ2G* APT65GP60L2DQ2 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7 IGBT ® TO-264 Max The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 100 kHz operation @ 400V, 54A • 50 kHz operation @ 400V, 76A • SSOA Rated G C E C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 7 All Ratings: TC = 25°C unless otherwise specified.
APT65GP60L2DQ2 UNIT Volts 600 ±30 @ TC = 25°C 198 96 250 250A @ 600V 833 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 150°C Switching Safe Opera...


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