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IRGP4063-EPBF

Part Number	IRGP4063-EPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Feb 26, 2014
Detailed Description	PD - 97404 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switchi...
Datasheet	IRGP4063-EPBF PDF File

Overview

PD - 97404 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package IRGP4063PbF IRGP4063-EPbF C VCES = 600V IC = 48A, TC = 100°C G E tSC ≥ 5μs, TJ(max) = 175°C n-channel C VCE(on) typ.
= 1.
65V Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI C GC E TO-247AC IRGP4063PbF E GC TO-247AD IRGP4063-EPbF G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw 300 (0.
063 in.
(1.
6mm) from case) 10 lbf·in (1.
1 N·m) Max.
600 96 48 Units V h c 144 192 ±20 ±30 330 170 -55 to +175 A A V W °C Thermal Resistance Parameter RθJC (IGBT) RθCS RθJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Min.
––– ––– ––– Typ.
––– 0.
24 ––– Max.
0.
45 ––– 40 Units °C/W 1 www.
irf.
com 06/30/09 Free Datasheet http://www.
datasheet-pdf.
com/ IRGP4063PbF/IRGP4063-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES ΔV(BR)CES/ΔTJ Min.
600 — — — — 4.
0 — — —...

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IRGP4063-EPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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