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IPB80N06S2-08

Infineon Technologies
Part Number IPB80N06S2-08
Manufacturer Infineon Technologies
Description Power-Transistor
Published Feb 27, 2014
Detailed Description IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automoti...
Datasheet PDF File IPB80N06S2-08 PDF File

IPB80N06S2-08
IPB80N06S2-08

Overview
IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 55 7.
7 80 V mΩ A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N06S2-08 IPP80N06S2-08 IPI80N06S2-08 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Ordering Code SP0002-18830 SP0002-18826 SP0002-18828 Marking 2N0608 2N0608 2N0608 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D= 80 A Value 80 80 320 450 ±20 215 -55 .
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