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MDS9651

Part Number	MDS9651
Manufacturer	MagnaChip
Description	Complementary N-P Channel Trench MOSFET
Published	Feb 27, 2014
Detailed Description	MDS9651– Complementary N-P Channel Trench MOSFET MDS9651 Complementary N-P Channel Trench MOSFET General Description Th...
Datasheet	MDS9651 PDF File

Overview

MDS9651– Complementary N-P Channel Trench MOSFET MDS9651 Complementary N-P Channel Trench MOSFET General Description The MDS9651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Features N-Channel VDS = 30V ID = 6.
9A @ VGS = 10V RDS(ON) <28mΩ @ VGS = 10V <42mΩ @ VGS = 4.
5V P-Channel VDS = -30V ID = -6.
0A @ VGS = -10V RDS(ON) <35mΩ @ VGS = -10V <55mΩ @ VGS = -4.
5V Applications Inverters General purpose applications 5(D2) 6(D2) 7(D1) 8(D1) D1 D2 4(G2) 3(S2) 2(G1) 1(S1) G1 G2 S1 S2 Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Cont...

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