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RU75N08

Ruichips
Part Number RU75N08
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Mar 5, 2014
Detailed Description RU75N08 N-Channel Advanced Power MOSFET MOSFET Features • 75V/80A, RDS (ON) =8mΩ VGS=10V IDS=40A • Ultra Low On-Resista...
Datasheet PDF File RU75N08 PDF File

RU75N08
RU75N08

Overview
RU75N08 N-Channel Advanced Power MOSFET MOSFET Features • 75V/80A, RDS (ON) =8mΩ VGS=10V IDS=40A • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Available Pin Description TO-220 TO-220F TO-263 TO-247 Applications • Switching Application Systems N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 75 ±25 175 -55 to 175 TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 80 ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A A A W °C/W J Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID PD RθJC Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case 360 80 76 280 140 0.
55 1.
2 Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
C – MAR.
, 2009 www.
ruichips.
com Free Datasheet http://www.
datasheetlist.
com/ RU75N08 Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ② (TA=25°C Unless Otherwise Noted) RU75N08 Min.
Typ.
Max.
Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=-250µA VDS= 75V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±25V, VDS=0V VGS= 10V, IDS=40A 75 1 30 2 3 8 4 ±100 11 V µA V nA mΩ Diode Characteristics VSD trr qrr ② Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ③ ISD=20 A, VGS=0V ISD=40A, dlSD/dt=100A/µs 0.
83 50 110 1.
2 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 30V, Frequency=1.
0MHz VDD=35V, RL=35Ω, IDS= 1A, VGEN= 10V, RG=7Ω 1.
4 3400 450 170 22 11 70...


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