DatasheetsPDF.com

IRFBA34N50C

International Rectifier
Part Number IRFBA34N50C
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 10, 2014
Detailed Description PD- 93931 PROVISIONAL IRFBA34N50C HEXFET® Power MOSFET SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Un...
Datasheet PDF File IRFBA34N50C PDF File

IRFBA34N50C
IRFBA34N50C

Overview
PD- 93931 PROVISIONAL IRFBA34N50C HEXFET® Power MOSFET SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case ) Recommended clip force VDSS 500V RDS(on) typ.
0.
070Ω ID 40A Super-220™ Max.
40 25 160 310 2.
5 ± 20 5.
0 -55 to + 150 300 20 Units A W W/°C V V/ns °C N Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ.
––– ––– ––– Max.
480 34 31 Units mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ.
––– 0.
50 ––– Max.
0.
40 ––– 58 Units °C/W www.
irf.
com 1 6/2/00 Free Datasheet http://www.
datasheetlist.
com/ IRFBA34N50C Symbol V(BR)DSS ∆V(BR)DSS/∆TJ PROVISIONAL Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
500 ––– ––– 3.
5 ––– ––– ––– ––– Typ.
––– 0.
68 0.
070 ––– ––– ––– ––– ––– Max.
Units Conditions ––– V V GS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA† 0.
075 Ω VGS = 10V, ID = 24A „ 5.
5 V VDS = VGS, ID = 250µA 25 VDS = 500V, VGS = 0V µA 250 VDS = 400V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA -100 VGS =...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)