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CMF10120D

Cree
Part Number CMF10120D
Manufacturer Cree
Description Silicon Carbide Power MOSFET
Published Mar 12, 2014
Detailed Description CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET Features Package VDS ID(MAX) = 1200 V = 24 A N-Channel Enh...
Datasheet PDF File CMF10120D PDF File

CMF10120D
CMF10120D

Overview
CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET Features Package VDS ID(MAX) = 1200 V = 24 A N-Channel Enhancement Mode RDS(on) = 160mΩ • • • • • • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits • • • Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Applications • • • • Solar Inverters High Voltage DC/DC Converters Motor Drives Switch Mode Power Supplies Part Number CMF10120D Package TO-247-3 Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol Parameter Continuous Drain Current Value 24 13 49 1.
2 0.
8 10 -5/+25 134 -55 to +135 260 1 8.
8 Unit A Test Conditions VGS@20V, TC = 25˚C VGS@20V, TC = 100˚C Note Fig.
10 ID IDpulse EAS EAR IAR VGS Ptot TJ , Tstg TL Md Pulsed Drain Current Single Pulse Avalanche Energy Repetitive Avalanche Energy Repetitive Avalanche Current Gate Source Voltage Power Dissipation Operating Junction and Storage Temperature Solder Temperature Mounting Torque A J J A V W ˚C ˚C Pulse width tP limited by Tjmax TC = 25˚C ID = 10A, VDD = 50 V, L = 20 mH tAR limited by Tjmax ID = 10A, VDD = 50 V, L = 15 mH tAR limited by Tjmax Fig.
15 TC=25˚C Fig.
9 1.
6mm (0.
063”) from case for 10s Nm M3 or 6-32 screw lbf-in 1 CMF10120D Rev.
A Free Datasheet http://www.
nDatasheet.
com Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS Parameter Drain-Source Breakdown Voltage Min.
1200 Typ.
2.
4 Max.
Unit V 3.
5 4.
1 Test Conditions VGS = 0V, ID = 50μA VDS = VGS, ID = 0.
5 mA VDS = VGS, ID = 1.
0 mA VDS = VGS, ID = 0.
5 mA, TJ = 135ºC VDS = VGS, ID = 1.
0 mA, TJ = 135ºC VDS = 1200V, VGS = 0V VDS = 1200V, VGS = 0V, TJ = 135ºC VGS = 20V, VDS = 0V VGS = 20V, ID = 10A VGS = 20V, ID = 10A, TJ = 135ºC VDS= 20V, IDS= 10A VDS= 20V, IDS= 10A, TJ = 135ºC VGS = 0V VDS = 800V...


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