DatasheetsPDF.com

C3D03060E

Cree
Part Number C3D03060E
Manufacturer Cree
Description Silicon Carbide Schottky Diode
Published Mar 12, 2014
Detailed Description C3D03060E Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec™ Rectifier Features Package IF (TC=135˚C) = 5.5 A ...
Datasheet PDF File C3D03060E PDF File

C3D03060E
C3D03060E


Overview
C3D03060E Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec™ Rectifier Features Package IF (TC=135˚C) = 5.
5 A Qc = 6.
7 nC • • • • • • • • 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF TO-252-2 Benefits • • • • • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 PIN 2 CASE Applications Part Number C3D03060E Package TO-252-2 Marking C3D03060 • • Switch Mode Power Supplies Power Factor Correction - Typical PFC Pout : 300W-450W Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter VRRM VRSM VDC IF Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Value 600 600 600 Unit V V V A Test Conditions Note 11.
5 5.
5 3 18 13.
5 26 23 100 53 23 -55 to +175 TC=25˚C TC=135˚C TC=160˚C TC=25˚C, tP=10 mS, Half Sine Wave D=0.
3 TC=110˚C, tP=10 mS, Half Sine Wave D=0.
3 TC=25˚C, tP=10 mS, Half Sine Wave D=0.
3 TC=110˚C, tP=10 mS, Half Sine Wave D=0.
3 TC=25˚C, tP=10 µS, Pulse TC=25˚C TC=110˚C IFRM IFSM IFSM Ptot TJ , Tstg Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current Power Dissipation Operating Junction and Storage Temperature A A A W ˚C 1 C3D03060E Rev.
B Free Datasheet http://www.
nDatasheet.
com Electrical Characteristics Symbol VF IR QC Parameter Forward Voltage Reverse Current Total Capacitive Charge Typ.
Max.
1.
7 2.
4 Unit V μA nC Test Conditions IF = 3 A TJ=25°C IF = 3 A TJ=175°C VR = 600 V TJ=25°C VR = 600 V TJ=175°C VR = 600 V, IF = 3A di/dt = 500 A/μS TJ = 25°C VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f =...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)