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C4D30120D


Part Number C4D30120D
Manufacturer Cree
Title Silicon Carbide Schottky Diode
Description C4D30120D–Silicon Carbide Schottky Diode Z-Rec™ Rectifier Features VRRM = IF; TC135˚C 1200 V = 43 A 192 nC Qc = Package • • • • ...
Features VRRM = IF; TC135˚C 1200 V = 43 A 192 nC Qc = Package




• 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching TO-247-3 Benefits




• Replace Bipolar with Unipolar Rectifiers ...

File Size 653.68KB
Datasheet C4D30120D PDF File








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C4D30120D : With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. 123 Package Types: TO-247-3 Marking: C4D30120 Features • High-Frequency Operation • Zero Reverse Recovery Current / Forward Recovery Voltage • Tempe.

C4D30120H : With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications. Package Types: TO-247-2 Marking: C4D30120H Features • Low Forward Voltage (VF) Drop with Positive Temperature Coefficient • Zero Reverse Recovery Cur.




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