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WFD830B

Winsemi
Part Number WFD830B
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Mar 14, 2014
Detailed Description Free Datasheet http://www.nDatasheet.com WFD830B Silicon N-Channel MOSFET Features � � � � � 5A,500V, RDS(on)(Max1.6Ω)@...
Datasheet PDF File WFD830B PDF File

WFD830B
WFD830B

Overview
Free Datasheet http://www.
nDatasheet.
com WFD830B Silicon N-Channel MOSFET Features � � � � � 5A,500V, RDS(on)(Max1.
6Ω)@VGS=10V Ultra-low Gate charge(Typical 18nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipa...


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