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H30T100

Infineon Technologies
Part Number H30T100
Manufacturer Infineon Technologies
Description IGBT
Published Mar 14, 2014
Detailed Description Soft Switching Series IHW30N100T q C Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with anti-paralle...
Datasheet PDF File H30T100 PDF File

H30T100
H30T100

Overview
Soft Switching Series IHW30N100T q C Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with anti-parallel diode Features: • 1.
1V Forward voltage of antiparallel rectifier diode • Specified for TJmax = 175°C • TrenchStop® and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Qualified according to JEDEC1 for target applications • Application specific optimisation of inverse diode • Pb-free lead plating; RoHS compliant Applications: • Microwave Oven • Soft Switching Applications Type IHW30N100T VCE 1000V IC 30A VCE(sat),Tj=25°C 1.
55V Tj,max 175°C Marking H30T100 Package PG-TO-247-3 G E PG-TO-247-3 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1000V, Tj ≤ 175°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation, TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.
6mm (0.
063 in.
) from case for 10s Ptot Tj Tstg IFpuls VGE ICpuls IF 22 12 36 ±20 ±25 412 -40.
.
.
+175 -55.
.
.
+175 260 W °C °C V Symbol VCE IC 60 30 90 90 Value 1000 Unit V A 1 J-STD-020 and JESD-022 1 Rev.
2.
7 Nov 08 Free Datasheet http://www.
nDatasheet.
com Power Semiconductors Soft Switching Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0 V , I C =500 μ A VCE(sat) V G E = 15 V, I C =30A T j = 25 ° C T j = 150 ° ...


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