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IRFU230A

Fairchild Semiconductor
Part Number IRFU230A
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Mar 22, 2014
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File IRFU230A PDF File

IRFU230A
IRFU230A

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.
) @ VDS = 200V Low RDS(ON) : 0.
333 Ω (Typ.
) IRFR/U230A BVDSS = 200 V RDS(on) = 0.
4 Ω ID = 7.
5 A D-PAK 2 1 3 1 I-PAK 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC ) * Total Power Dissipation (TC=25oC ) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 “ from case for 5-seconds 1 O o o Value 200 7.
5 4.
8 30 + _ 30 150 7.
5 5 5.
0 2.
5 50 0.
4 - 55 to +150 Units V A A V mJ A mJ V/ns W W W/ C o O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ.
---Max.
2.
5 50 110 o Units C/W * When mounted on the minimum pad size recommended (PCB Mount).
Rev.
B ©1999 Fairchild Semiconductor Corporation Free Datasheet http://www.
0PDF.
com IRFR/U230A Symbol BVDSS ∆BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min.
Typ.
Max.
Units 200 -2.
0 -----------------0.
21 ------3.
73 500 95 45 13 13 30 18 22 ...


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