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IRFR230A

Fairchild Semiconductor
Part Number IRFR230A
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Mar 22, 2014
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File IRFR230A PDF File

IRFR230A
IRFR230A

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.
) @ VDS = 200V Low RDS(ON) : 0.
333 Ω (Typ.
) IRFR/U230A BVDSS = 200 V RDS(on) = 0.
4 Ω ID = 7.
5 A D-PAK 2 1 3 1 I-PAK 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC ) * Total Power Dissipation (TC=25oC ) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 “ from case for 5-seconds 1 O o o Value 200 7.
5 4.
8 30 + _ 30 150 7.
5 5 5.
0 2.
5 50 0.
4 - 55 to +150 Units V A A V mJ...


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