DatasheetsPDF.com

NT5CC1024M4CN

Part Number	NT5CC1024M4CN
Manufacturer	Nanya
Description	4Gb DDR3 SDRAM C-Die
Published	Mar 24, 2014
Detailed Description	4Gb DDR3 SDRAM C-Die NT5CB1024M4CN / NT5CB512M8CN / NT5CB256M16CP NT5CC1024M4CN / NT5CC512M8CN / NT5CC256M16CP Feature ...
Datasheet	NT5CC1024M4CN PDF File

Overview

4Gb DDR3 SDRAM C-Die NT5CB1024M4CN / NT5CB512M8CN / NT5CB256M16CP NT5CC1024M4CN / NT5CC512M8CN / NT5CC256M16CP Feature  VDD = VDDQ = 1.
5V ± 0.
075V (JEDEC Standard Power Supply)  VDD = VDDQ = 1.
35V -0.
0675V/+0.
1V (Backward Compatible to VDD = VDDQ = 1.
5V ±0.
075V) 8 Internal memory banks (BA0- BA2) Differential clock input (CK, ) Programmable Latency: 5, 6, 7, 8, 9, 10, 11, 12, 13    WRITE Latency (CWL): 5,6,7,8,9, 10 POSTED CAS ADDITIVE Programmable Additive Latency (AL): 0, CL-1, CL-2 clock   Programmable Sequential / Interleave Burst Type Programmable Burst Length: 4, 8 Through ZQ pin (RZQ:240 ohm±1%)           8n-bit prefetch architecture Output Driver Impedance Control Differential bidirectional data strobe Internal(self) calibration:Internal self calibration OCD Calibration Dynamic ODT (Rtt_Nom & Rtt_WR) Auto Self-Refresh Self-Refresh Temperature RoHS compliance and Halogen free Packages: 78-Balls BGA for x4/x8 components 96-Ball BGA for x16 components    Description The 4Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 4,294,967,296 bits.
It is internally configured as an octal-bank DRAM.
The 4Gb chip is organized as 128Mbit x 4 I/O x 8 bank , 64Mbit x 8 I/O x 8 banks and 32Mbit x16 I/O x 8 banks.
These synchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks.
Inputs are latched at the cross point of differential clocks (CK rising and  falling).
All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion.
These devices operate with a single 1.
5V ± 0.
075V and 1.
35V -0.
0675V/+0.
1V power supply and are available in BGA packages.
1 REV 1.
0 04/ 2012 Free Datasheet http://www.
0PDF.
com 4Gb DDR3 SDRAM C...

Similar Datasheet

NT5CC1024M4BN 4Gb DDR3 SDRAM B-Die - Nanya
NT5CC1024M4CN 4Gb DDR3 SDRAM C-Die - Nanya

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)