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H30R1202

Infineon
Part Number H30R1202
Manufacturer Infineon
Description Reverse Conducting IGBT
Published Mar 25, 2014
Detailed Description IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Bo...
Datasheet PDF File H30R1202 PDF File

H30R1202
H30R1202

Overview
IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ Applications: • Inductive Cooking • Soft Switching Applications Type IHW30N120R2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.
5µs, sine halfwave TC = 100°C, tp ≤ 2.
5µs, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.
6mm (0.
063 in.
) from case for 10s Ptot Tj Tstg IFpuls IFSM Symbol VCE IC Value 1200 60 30 90 90 60 30 90 50 130 120 ±20 ±25 390 -40.
.
.
+175 -55.
.
.
+175 260 W °C V Unit V A VCE 1200V IC 30A VCE(sat),Tj=25°C 1.
65V Tj,max 175°C Marking H30R1202 Package PG-TO-247-3 C G E PG-TO-247-3 ICpuls IF VGE 1 J-STD-020 and JESD-022 1 Rev.
1.
5 Dec.
09 Free Datasheet http://www.
0PDF.
com Power Semiconductors IHW30N120R2 Soft Switching Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwis...


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