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K6A60D

Toshiba Semiconductor
Part Number K6A60D
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 27, 2014
Detailed Description TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A60D Switching Regulator Applications • ...
Datasheet PDF File K6A60D PDF File

K6A60D
K6A60D

Overview
TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A60D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.
0 Ω (typ.
) • High forward transfer admittance: |Yfs| = 3.
0 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature...


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