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C3207

FGX
Part Number C3207
Manufacturer FGX
Description NPN Silicon
Published Mar 28, 2014
Detailed Description ·ç¹âÐÀ¼¼Êõ×ÊÁÏ ■■APPLICATION: High Voltage Switching Applications. C3207 —NPN silicon — ■■MAXIMUM RATINGS（Ta＝25℃） PARA...
Datasheet PDF File C3207 PDF File

C3207
C3207

Overview
·ç¹âÐÀ¼¼Êõ×ÊÁÏ ■■APPLICATION: High Voltage Switching Applications.
C3207 —NPN silicon — ■■MAXIMUM RATINGS（Ta＝25℃） PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC TJ Tstg RATING UNIT 300 300 7 100 1 150 V V V mA W ℃ 1 TO-92L 1.
Emitter 2.
Collector 3.
Base ﹣55~150 ℃ ■■ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain bandwidth product Common Base Output Capacitance SYMBOL hFE ICBO IEBO BVCBO BVCEO BVEBO VCE(sat) VBE(sat) fT Cob 50 3 300 300 7 1 1 30 MIN.
TYP.
MAX.
UNIT 150 1 1 µA µA V V V V V MHz PF TEST CONDITION VCE= 10V，Ic= 20mA VCB= 240V，IE=0 VEB= 7V，Ic=0 Ic= 0.
1mA，IE=0 Ic= 1mA，IB=0 IE= 0.
1mA，Ic=0 Ic= 10mA，IB= 1mA Ic= 10mA, IB= 1mA Ic= 20mA，VCE= 10V VCB= 20V, I E=0, f = 1MHz ■■hFE Classification Classification hFE 30～150 Free Datasheet http://www.
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