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AUIRF7207Q

International Rectifier
Part Number AUIRF7207Q
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 29, 2014
Detailed Description   AUTOMOTIVE GRADE AUIRF7207Q 8 Features  Advanced Process Technology  Low On-Resistance  P-Channel MOSFET  ...
Datasheet PDF File AUIRF7207Q PDF File

AUIRF7207Q
AUIRF7207Q

Overview
  AUTOMOTIVE GRADE AUIRF7207Q 8 Features  Advanced Process Technology  Low On-Resistance  P-Channel MOSFET  Dynamic dV/dT Rating  150°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Lead-Free, RoHS Compliant  Automotive Qualified* Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
 S S S G 1 A D D D D VDSS RDS(on) max ID -20V 0.
06 -5.
4A 2 7 3 6 4 5 Top View   SO-8 Base part number AUIRF7207Q Package Type SO-8 Standard Pack Form Tube Tape and Reel Quantity 95 2500 Orderable Part Number AUIRF7207Q AUIRF7207QTR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS VGSM EAS TJ TSTG Thermal Resistance Symbol RJA Parameter Drain-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µs Single Pulse Avalanche Energy (Thermally Limited)  Operating Junction and Stora...


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