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AUIRF7478Q

International Rectifier
Part Number AUIRF7478Q
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 29, 2014
Detailed Description AUTOMOTIVE GRADE PD- 96423A AUIRF7478Q Features l l l l l l l l l HEXFET® Power MOSFET S S S G 1 2 3 4 8 7 Advanced ...
Datasheet PDF File AUIRF7478Q PDF File

AUIRF7478Q
AUIRF7478Q

Overview
AUTOMOTIVE GRADE PD- 96423A AUIRF7478Q Features l l l l l l l l l HEXFET® Power MOSFET S S S G 1 2 3 4 8 7 Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * A A D D D D V(BR)DSS RDS(on) typ.
60V 20mΩ 6 5 max.
26mΩ ID 7.
0A Top View Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
SO-8 G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS EAS IAR dv/dt TJ TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
60 7.
0 5.
6 56 2.
5 0.
02 ± 20 140 4.
2 3.
7 -55 to + 150 300 (1.
6mm from case) Units V A W W/°C V m...


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