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AUIRF7736M2TR1

International Rectifier
Part Number AUIRF7736M2TR1
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 29, 2014
Detailed Description PD - 96316B AUTOMOTIVE GRADE Automotive DirectFET® Power MOSFET ‚ • Advanced Process Technology • Optimized for Automo...
Datasheet PDF File AUIRF7736M2TR1 PDF File

AUIRF7736M2TR1
AUIRF7736M2TR1

Overview
PD - 96316B AUTOMOTIVE GRADE Automotive DirectFET® Power MOSFET ‚ • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and • • • • • • • • AUIRF7736M2TR AUIRF7736M2TR1 40V 2.
5mΩ 3.
0mΩ 108A 72nC other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead Free, RoHS Compliant and Halogen Free Automotive Qualified * V(BR)DSS RDS(on) typ.
max.
ID (Silicon Limited) Qg 5 & ) 5 5 5 & Applicable DirectFET® Outline and Substrate Outline  SB SC M2 M4 M4 DirectFET® ISOMETRIC L4 L6 L8 Description The AUIRF7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.
7mm profile.
The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value.
The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRF7736M2 to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms.
This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area.
Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability.
These features combine to make...


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